Article By : Maurizio Di Paolo Emilio
SiC will play an essential role in the transition from 400V to 800V (and beyond) electric-vehicle systems.
While silicon has almost reached its theoretical limit, silicon carbide power devices have achieved a high degree of reliability and maturity, offering fast switching and an unprecedented efficiency level in the automotive sector. This article, based on an analysis conducted by PGC Consultancy, explains how SiC will play an essential role in the transition from 400-V to 800-V (and beyond) electric-vehicle systems.
In a previous article, “SiC Power Devices: Lowering Costs to Drive Adoption,” the costs of a SiC device were analyzed, justifying why a SiC MOSFET costs 2× to 3× as much as an identical Si IGBT and attempting to anticipate how the price of these will…